2SK1094 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK1094
AON6992 30V Dual Asymmetric N-Channel MOSFET Components datasheet pdf data sheet FREE from Datasheet4U.com Datasheet (data sheet) search for integrated circuits (ic), semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. LTC6992CS6-1#TRPBF Analog Devices Switching Controllers PWM with 0% to 100% Pulse Width Control datasheet, inventory & pricing. BYV28-200-TAP Vishay Semiconductors Rectifiers 3.5 Amp 200 Volt 90 Amp IFSM datasheet, inventory & pricing.
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 25 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 15 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 70 ns
Выходная емкость (Cd): 450 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.055 Ohm
Тип корпуса: TO220FM
2SK1094 Datasheet (PDF)
0.1. 2sk1094.pdf Size:19K _hitachi
2SK1094Silicon N-Channel MOS FETApplicationTO220FMHigh speed power switchingFeatures Low on-resistance2 High speed switching 123 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter,1. Gatepower switch and solenoid drive2. Drain3. Source3Table 1 Absolute Maximum Ratings (Ta
8.1. 2sk1096-mr.pdf Size:140K _fuji
8.2. 2sk1098-m.pdf Size:178K _fuji
N-channel MOS-FET2SK1098-MF-III Series 150V 0,5 6A 30W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Forward Transconductance> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C),
8.3. 2sk1099.pdf Size:60K _fuji
8.4. 2sk1095.pdf Size:19K _hitachi
2SK1095Silicon N-Channel MOS FETApplicationTO220FMHigh speed power switchingFeatures Low on-resistance212 High speed switching3 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter,1. Gatepower switch and solenoid drive2. Drain3. Source3Table 1 Absolute Maximum Ratings (Ta
8.5. 2sk1093.pdf Size:20K _hitachi
2SK1093Silicon N-Channel MOS FETApplicationTO220FMHigh speed power switchingFeatures Low on-resistance21 High speed switching23 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter,1. Gatepower switch and solenoid drive2. Drain3. Source3Table 1 Absolute Maximum Ratings (Ta
8.6. 2sk1099.pdf Size:204K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK1099DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)
8.7. 2sk1095.pdf Size:226K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK1095FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
Другие MOSFET... 2SJ590LS, 2SJ601, 2SJ601Z, 2SJ74, 2SK1016, 2SK1082, 2SK1086, 2SK1093, 2N3824, 2SK1095, 2SK1096-MR, 2SK1098-M, 2SK1099, 2SK1117, 2SK1118, 2SK1153, 2SK1154.
Список транзисторов
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